Light emitting device and method of manufacturing the same

ABSTRACT

Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance.

This application claims the priority of Korean Patent Application No.2003-65219 filed on Sep. 19, 2003 in the Korean Intellectual PropertyOffice, the disclosure of which is incorporated herein in its entiretyby reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a light emitting device and a method ofmanufacturing the same, and more particularly, to a light emitting diode(LED) having a high emission efficiency, capable of operating at a lowvoltage and emitting blue and green lights, and a method ofmanufacturing the same.

2. Description of the Related Art

LEDs are widely used as a light source of an optical communicationapparatus and a light source to visually display the operating state ofan electronic apparatus. Accordingly, a variety of LEDs are providedaccording to the application fields of devices using LEDs. The range ofuse of LEDs has more expanded by semiconductor devices emitting a bluelight or a green light.

FIG. 1 is an example of a conventional LED.

Referring to FIG. 1, an n-GaN layer 12 is formed on a substrate 10. Then-GaN layer 12 is divided into a first region R1, on which an activelayer 14 is formed, and a second region R2, on which an n-type electrode22 is formed. There is a step between the first and second regions R1and R2. The active layer 14, a p-GaN layer 16, and a p-type electrode 18are formed sequentially on the first region R1 of the n-GaN layer 12.Here, the p-type electrode 18, as a high reflective electrode, reflectsthe light emitted from the active layer 14 toward the substrate 10.

Due to the high contacting resistance between the p-GaN layer 16 and thep-type electrode 18 in the conventional LED, the emission efficiency islow at a predetermined voltage. The problem of low emission efficiencycould be solved by increasing the operating voltage.

However, attempts to solve the low emission efficiency problem of theLED by simply applying a higher operating voltage to the p-typeelectrode 18, and maintaining the high contact resistance between thep-GaN layer 16 and the p-type electrode 18 run against the efforts toreduce the operating voltage. This can cause a new problem.

SUMMARY OF THE INVENTION

To solve the above and other problems, the present invention provides aLED capable of operating at a low operating voltage without reducing theemission efficiency, by lowering the contact resistance between a p-typeelectrode and a p-type compound layer, and a method of manufacturing theLED.

According to an aspect of the present invention, there is provided theLED comprising: at least an n-type compound semiconductor layer, anactive layer, and a p-type compound semiconductor layer which aredisposed between an n-type electrode layer and a p-type electrode layer,wherein the p-type electrode comprises first and second electrodes, eachelectrode having different characteristics of resistance andreflectance.

The first electrode may be formed of a lanthanum nickel oxide film at apredetermined thickness.

The second electrode may be formed of one selected from the groupconsisting of silver (Ag) film, aluminum (Al) film, rhodium (Rh) film,and tin (Sn) film.

According to another aspect of the present invention, there is provideda LED comprising: a transparent substrate; an n-type compoundsemiconductor layer formed on the transparent substrate; an active layerformed on a first region of the n-type compound semiconductor layer; ap-type compound semiconductor layer formed on the active layer; acontact resistance reducing film formed on the p-type compoundsemiconductor layer; a p-type electrode formed on the contact resistancereducing film; and an n-type electrode formed on a second regionseparated from the first region of the n-type compound semiconductorlayer.

The contact resistance reducing film may be a lanthanum nickel oxidefilm.

The p-type electrode may be formed of one selected from the groupconsisting of silver (Ag) film, aluminum (Al) film, rhodium (Rh) film,and tin (Sn) film.

According to further another aspect of the present invention, there isprovided a method of manufacturing a LED comprising: a first step ofsequentially depositing an n-type compound semiconductor layer, anactive layer, and a p-type compound semiconductor layer on a transparentsubstrate; a second step of exposing a predetermined portion of then-type compound semiconductor layer by patterning sequentially thep-type compound semiconductor layer and the active layer; a third stepof forming an n-type electrode on the disclosed region of the n-typecompound semiconductor layer; a fourth step of forming a metal compoundfilm on the patterned the p-type compound semiconductor layer; a fifthstep of oxidizing the metal compound film; and a sixth step of forming aconductive reflection film on the oxidized metal compound film.

The fourth step may comprise a step forming a photosensitive filmpattern for disclosing the p-type compound semiconductor layer on thep-type compound semiconductor layer, and forming a metal compound filmcontacting the disclosed portion of the p-type compound semiconductorlayer on the photosensitive film pattern.

Also, a resultant in which the reflective film is formed is annealedunder a nitrogen atmosphere.

According to further another aspect of the present invention, there isprovided a method for manufacturing a LED, comprising: a first step offorming an n-type compound semiconductor layer on a transparentsubstrate; a second step of sequentially forming an active layer and ap-type compound semiconductor layer on the n-type compound semiconductorlayer; a third step of patterning the p-type compound semiconductorlayer and the active layer for exposing a predetermined portion of then-type compound semiconductor layer; a fourth step of forming an n-typeelectrode on the exposed region of the n-type compound semiconductorlayer; a fifth step of sequentially forming a metal compound film and aconductive reflection film on the patterned p-type compoundsemiconductor layer; and a sixth step of oxidizing the metal compoundfilm.

The fifth step may comprise: a step of forming a photosensitive filmpattern for exposing the p-type compound semiconductor layer on thep-type compound semiconductor layer; a step of forming a metal compoundfilm contacting the disclosed predetermined portion of the p-typecompound semiconductor layer on the photosensitive film pattern, and astep of forming a reflective film on the metal compound. After the sixthstep, the photosensitive film pattern, together with the oxide of metalcompound and the reflective film, may be removed.

Also, the oxidized metal compound film may be annealed under a nitrogenatmosphere.

In accordance with another aspect of the present invention, there isprovided a method of manufacturing a LED, comprising: a first step offorming an n-type compound semiconductor layer, an active layer, ap-type compound semiconductor layer, a metal compound oxide film, and aconductive reflection film sequentially on a transparent substrate; asecond step of sequentially exposing a predetermined portion of then-type compound semiconductor layer by removing a predetermined portionof the conductive reflection film, the metal compound oxide film, thep-type compound semiconductor layer, and the active layer; and a thirdstep of forming an n-type electrode on the exposed region of the n-typecompound semiconductor layer.

The first step may comprise: a step of sequentially forming the n-typecompound semiconductor layer, the active layer, and the p-type compoundsemiconductor layer on the transparent substrate; a step of forming ametal compound film on the p-type compound semiconductor layer; a stepof oxidizing the metal compound film; and a step of forming a reflectivefilm on the oxidize the metal compound film.

Also, the first step may comprise: a step of sequentially forming then-type compound semiconductor layer, the active layer, and the p-typecompound semiconductor layer on the transparent substrate; a step offorming a metal compound film on the p-type compound semiconductorlayer; a step of forming the reflective film on the metal compound film;and a step of oxidizing the metal compound film.

The formed n-type electrode may be annealed under a nitrogen atmosphere.

In accordance with another aspect of the present invention, there isprovided a method for manufacturing a LED, comprising: a first step ofsequentially forming an n-type compound semiconductor layer, an activelayer, a p-type compound semiconductor layer, a metal compound film, anda conductive reflection film on a transparent substrate; a second stepof exposing a predetermined portion of the n-type compound semiconductorlayer by removing a predetermined portion of the conductive reflectionfilm, the metal compound film, the p-type compound semiconductor layer,and the active layer; and a third step of oxidizing the metal compoundfilm.

Here, after the second and third steps, an n-type electrode may beformed on the exposed region of the n-type compound semiconductor layer.

According to the present invention, the metal compound film may beformed of a lanthanum nickel film, and the metal compound oxide film maybe a lanthanum nickel oxide film. The reflective film may be formed ofone selected from the group consisting of silver film, aluminum film,rhodium film, and tin film.

The present invention provides a material film between the reflectivefilm used as a p-type electrode and the p-type compound semiconductorlayer. The material film reduces the contact resistance between thereflective film and the p-type compound semiconductor layer and has ahigh reflectance. Accordingly, the present invention increases theefficiency at a lower operating voltage.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a structure of a conventional LED;

FIG. 2 is a cross-sectional view of a structure of a LED according to anembodiment of the present invention;

FIGS. 3 and 4 are graphs respectively showing current and reflectancecharacteristics of a contact resistance reducing film used in the LED ofFIG. 2; and

FIGS. 5 through 15 are cross-sectional views showing steps of a methodof manufacturing the LED of FIG. 2 according to a first embodiment ofthe present invention (FIGS. 5 through 10), a second embodiment of thepresent invention (FIGS. 11 and 12), and a third embodiment of thepresent invention (FIGS. 13 through 15).

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, a light emitting device (LED) in accordance with theembodiments of the present invention will be described more fully withreference to the accompanying drawings. To facilitate understanding, thethickness of the films and regions in the drawings are exaggerated forclarity.

Referring to FIG. 2, a first compound semiconductor layer 42 is formedon a transparent substrate 40 of a LED according to the presentinvention. The first compound semiconductor layer 42 is preferablyformed of an III-V group n-type semiconductor layer, for example, ann-GaN layer, but it can be formed of other semiconductor layers. Thefirst compound semiconductor layer 42 is divided into a first region R1and a second region R2. An active layer 44 emitting lights, such as blueor green light by recombining of the p-type and n-type carrier, isformed on the first region R1. A second compound semiconductor layer 46is deposited on the active layer 44. The second compound semiconductorlayer 46 is preferably formed of an III-V group p-type compoundsemiconductor layer, for example, a p-GaN layer, but it may be formed ofother semiconductor layers. A contact resistance reducing film 48,reducing a contact resistance and having a high reflectance, and areflective film 50 are sequentially deposited on the second compoundsemiconductor layer 46. The contact resistance reducing film 48 and thereflective film 50 form a p-type electrode. It is considered that thereflective film 50 is used as the p-type electrode, and the contactresistance reducing film 48 is used as a means for reducing the contactresistance between the reflective film 50 and the second compoundsemiconductor layer 46. The contact resistance reducing film 48 may beformed of a compound containing a lanthanide, for example, a lanthanum(La) and a nickel (Ni), preferably, a lanthanum nickel oxide film, suchas LaNiO₅ film. The thickness of the contact resistance reducing film 48is in the range of 1-100 nm, preferably, approximately 10 nm. Thereflective film 50 having a higher reflectance relative to the contactresistance reducing film 48 is preferably formed of silver (Ag), but itmay be formed of other materials, such as one selected from the groupconsisting of aluminum (Al), rhodium (Rh), and tin (Sn).

An n-type electrode 52 is formed on the second region R2 of the firstcompound semiconductor layer 42.

A light is emitted from the active layer 44 toward the transparentsubstrate 40 and the reflective film 50 by applying a required voltage,i.e., more than a threshold voltage to the p-type electrode, which isformed by the reflective film 50 or the reflective film 50 and thecontact resistance reducing film 48, and the n-type electrode. The lightL1 emitted toward the transparent substrate 40 is discharged through thetransparent substrate 40. The light emitted toward the reflective film50 is discharged through the transparent substrate 40 after beingreflected by the contact resistance reducing film 48 or the reflectivefilm 50. A reference numeral L2 represents the light reflected by thereflective film 50.

The p-type electrode may be used as a p-type electrode of a lightemitting device having p-type and n-type electrodes which face eachother and of a light emitting device having a ridge wave guide. Also,the n-type electrode 52 of FIG. 2 may be formed on the bottom of thetransparent substrate 40 when the transparent substrate 40 is aconductive substrate.

FIG. 3 shows the characteristics of current versus voltage of a LEDaccording to the present invention and the conventional art. A referencenumeral G1 in FIG. 3 represents a first graph of current versus voltageof a p-type electrode formed of lanthanide nickel oxide film (LaNiO) andsilver film (Ag) of a LED according to the present invention, and anumeral G2 represents a second graph of current versus voltage of ap-type electrode formed of silver (Ag) of a LED according to theconventional art.

Referring to the first and the second graphs G1 and G2, it is seen thatthe LED according to the present invention commences operating at 3volts, while, that of the conventional art commences operating atapproximately 4 volts. That is, the operating voltage of the LEDaccording to the present invention is reduced relative to the operatingvoltage of the conventional art by forming the p-type electrode with thecontact resistance reducing film and the reflective film.

FIG. 4 shows a reflection characteristic of the lanthanide nickel oxidefilm having a thickness of 10 nm used as the contact resistance reducingfilm 48 of a LED according to the present invention. A reference numeralG3 represents a third graph showing the reflection characteristic of thelanthanide nickel oxide film.

Referring to FIG. 3, the lanthanide nickel oxide film shows a highreflectance characteristic in all visible light range, for example, 85%in a short wavelength of 400 nm.

Likewise, due to the superior reflectance of the lanthanide nickel oxidefilm used as the contact resistance reducing film 48, the amount oflight reflected to the transparent substrate 40 among the lightdischarged toward the reflective film 50 by the active layer 44 isincreased compare to a case when there is no contact resistance reducingfilm 48.

Accordingly, the amount of light discharged through the transparentsubstrate 40 of a LED according to the present invention is larger thanthat discharged through a reflective film 50 formed only by p-typeelectrode of the conventional art. That is, the emission efficiency ofthe present invention is higher than that of the conventional art at thesame level of operating voltage.

From the FIGS. 3 and 4, it is seen that a LED according to the presentinvention is capable of operating at a lower voltage with a high lightemission efficiency compared to a LED of the conventional art.

Now, a method of manufacturing a LED of FIG. 2 will be described.

First Embodiment

Referring to FIG. 5, a first compound semiconductor layer 42 is formedon a transparent substrate 40. The first compound semiconductor layer 42is preferably formed of n-GaN layer, but it can be formed of othercompound semiconductor layer. An active layer 44 and a second compoundsemiconductor layer 46 are formed sequentially on the first compoundsemiconductor layer 42. The second compound semiconductor layer 46 canbe formed of p-GaN layer, but it can be formed of other compoundsemiconductor layer. A first photosensitive film pattern PR1 is formedon the second compound semiconductor layer 46. The first photosensitivefilm pattern PR1 defines regions for an n-type electrode and a p-typeelectrode, which will be later formed.

Referring to FIGS. 5 and 6, the second compound semiconductor layer 46and the active layer 44 are sequentially etched by using the firstphotosensitive film pattern PR1 as an etching mask. Preferably, theetching can be done until the first compound semiconductor layer 42 isexposed, but it can be continued until a predetermined thickness of thefirst compound semiconductor layer 42 is removed.

Afterward, the first photosensitive film pattern PR1 is removed. Ann-type electrode 52 is formed on the predetermined region where theexposed region by etching of the first compound semiconductor layer 42.The n-type electrode 52 can be formed after the following processes arecompleted.

Referring to FIG. 7, a second photosensitive film pattern PR2 is formedcovering the whole region of the n-type electrode 52 formed includingthe n-type electrode 52, and exposing the majority of the secondcompound semiconductor layer 46. The second photosensitive film patternPR2 defines a region for forming the p-type electrode. A metal compoundfilm 47 is formed contacting the whole surface of the second compoundsemiconductor layer 46 on the second photosensitive film pattern PR2.The metal compound film 47 is preferably formed of lanthanide nickelcompound (LaNi), but it can be formed of other metal compound film. Themetal compound film 47 can have a thickness in the range of 1-100 nm,preferably, it is formed having a thickness of 10 nm. The metal compoundfilm 47 may be formed differently depending on the film material used.

Next, the resultant metal compound film 47 is oxidized by annealing fora predetermined time at a predetermined temperature under an oxidizingatmosphere. Then, a contact resistance reducing film 48 contacting thewhole surface of the disclosed region of the second compoundsemiconductor layer 46 is formed on the second photosensitive filmpattern PR2 as depicted in FIG. 8. The contact resistance reducing film48, as a high reflectance material film having a low electricalresistance as foregoing description, is preferably formed of lanthanidenickel oxide film, such as LaNiO₅, but it can be formed of other oxidefilms.

Referring to FIG. 9, a reflective film 50 is formed on the contactresistance reducing film 48. The reflective film alone can be used asthe p-type electrode, but the contact resistance reducing film 48 alsocan be used as an electrode considering the characteristic of resistanceof the contact resistance reducing film 48. Therefore, the p-typeelectrode can be formed of both the reflective film 50 and the contactresistance reducing film 48. The reflective film 50 preferably can beformed of silver (Ag), but it can be formed of other materials having ahigh reflectance that can be used as an electrode, such as aluminum,rhodium, or tin.

Referring to FIGS. 9 and 10, the second photosensitive film pattern PR2is removed from the resulting product where the reflective film 50 isformed in FIG. 9. In this removing process, the contact resistancereducing film 48 and the reflective film 50 deposited sequentially onthe second photosensitive film pattern PR2 are also removed. As theresult, the contact resistance reducing film 48 and the reflective film50, which will be used as the p-type electrode, are formed on the secondcompound semiconductor layer 46.

Second Embodiment

The same processes of the first embodiment for forming the firstcompound semiconductor layer 42, the active layer 44, and the secondcompound semiconductor layer 46 on the transparent substrate 40, etchingthe layers in reverse order, and forming the n-type electrode 52 on thedisclosed region of the first compound semiconductor layer 42 areconducted. Accordingly, the descriptions of the material films in thefirst embodiment will be omitted

Referring to FIG. 11, a third photosensitive film pattern PR3 is formedcovering the region of the n-type electrode 52 formed including then-type electrode 52, and disclosing the majority of the second compoundsemiconductor layer 46. The third photosensitive film pattern PR3defines a region for forming the p-type electrode. A metal compound film47 and a reflective film 50 are formed sequentially on the thirdphotosensitive film pattern PR3. Next, the resulting product having thereflective film 50 is annealed to oxidize the metal compound film 47 asthe same condition as described in the first embodiment under theoxidizing atmosphere. The metal compound film becomes a metal compoundoxide film by annealing, and then a contact resistance reducing film 48is formed between the reflective film 50 and the second compoundsemiconductor layer 46 as depicted in FIG. 12.

Afterward, by removing the third photosensitive film pattern PR3together with the contact resistance reducing film 48 and the reflectivefilm 50 which were deposited sequentially, the resulting product asdepicted in FIG. 10 is obtained. The n-type electrode 52 can be formedafter removing the third photosensitive film pattern PR3.

Third Embodiment

The descriptions the material films in the first and the secondembodiments will be omitted.

Referring to FIG. 13, a first compound semiconductor layer 42, theactive layer 44, the second compound semiconductor layer 46, the metalcompound film 47, and the reflective film 50 are sequentially depositedon the transparent substrate 40.

A fourth photosensitive film pattern PR4 which defines the region forp-type electrode is formed on the reflective film 50.

Next, as depicted in FIG. 14, the deposited material films on the firstcompound semiconductor layer 42 are etched in reverse order by using thefourth photosensitive film pattern PR4 as an etching mask. Here, theetching preferably can be done until the first compound semiconductorlayer 42 is disclosed, but it can be continued until a predeterminedthickness of the first compound semiconductor layer 42 is removed. Aportion of the region of the first compound semiconductor layer 42 isdisclosed by etching. An n-type electrode will be formed on thedisclosed region of the first compound semiconductor layer 42 in thefollowing process. After etching, the fourth photosensitive film patternPR4 is removed by ashing and stripping.

Referring to FIGS. 14 and 15 together, after removing the fourthphotosensitive film pattern PR4, the resulting product is annealed asthe same condition as described in the first embodiment under oxidizingatmosphere. Then, the metal compound film 47 is oxidized, and a contactresistance reducing film 48 is formed between the second compoundsemiconductor layer 46 and the reflective film 50.

Fourth Embodiment

The fourth embodiment is characteristic in that, prior to forming thereflective film 50 on the metal compound film 47 as depicted in FIG. 13in the third embodiment, the oxidation of the metal compound 47 isperformed in advance to form a metal compound film. After that, a fourthphotosensitive film pattern PR4 is formed on the reflective film 50. Byusing the fourth photosensitive film pattern PR4 as an etching mask, thereflective film 50, the oxidized metal compound film, the secondcompound semiconductor layer 46, and the active layer 44 are etchedsequentially. Then, the fourth photosensitive film pattern PR4 isremoved.

In the method of manufacturing a LED according to the first throughfourth embodiments, after forming the p-type electrode, which comprisesthe contact resistance reducing film 48 and the reflective film 50,formed on the second compound semiconductor layer 46, the resultingproduct can be heat treated under a nitrogen atmosphere. The heattreatment temperature can be in the range of 300-900° C. for apredetermined time.

The LED according to the present invention provides a material filmhaving a low contacting resistance and a high reflectance formed betweena reflective film, which is used as a p-type electrode, and a p-typecompound semiconductor layer. Accordingly, the use of the LED accordingto the present invention allows operating at a low voltage andincreasing the emission efficiency.

While this invention has been particularly shown and described withreference to embodiments thereof, it should not be construed as beinglimited to the embodiments set forth herein but as an exemplary. Thisinvention may, however, be embodied in many different forms by thoseskilled in this art. For example, the reflective film can be formed ofdouble layers. Also, the technical thought of the present invention canbe applied to a LED having a p-type electrode and an n-type electrodeformed not in a same direction. Further, the oxidation process forconverting a metal compound film to a contact resistance reducing filmmay adopt other method than annealing method. Likewise, since thepresent invention can be made in many different forms the scope of thepresent invention shall be defined by the sprit of technical thoughtwith reference to the appended claims, not by the embodiments set forthherein.

1. A method of manufacturing for a light emitting device, comprising:sequentially forming an n-type compound semiconductor layer, an activelayer and a p-type compound semiconductor layer on a transparentsubstrate; forming a metal compound film on the p-type compoundsemiconductor layer, forming a conductive reflection film on the metalcompound film; and oxidizing the metal compound film to form a contactresistance reducing film, after forming a conductive reflection film. 2.The method of claim 1, further comprising exposing a predeterminedportion of the n-type compound semiconductor layer by removing apredetermined portion of the conductive reflection film, the metalcompound film, the p-type compound semiconductor layer, and the activelayer, after the step of forming the conductive refection film.
 3. Themethod of claim 2, further comprising forming an n-type electrode on theexposed region of the n-type compound semiconductor layer, afterperforming one of the exposing a predetermined portion of the n-typecompound semiconductor layer and oxidizing the metal compound film. 4.The method of claim 1, where the conductive reflection film is formed ofone selected from the group consisting of silver (Ag), aluminum (Al),rhodium (Rh), and tin (Sn).
 5. The method of claim 1, where afteroxidizing the metal compound film, a resultant in which the oxidizedmetal compound film is annealed under a nitrogen atmosphere.
 6. Themethod of claim 1, the metal compound film is lanthanum nickel (LaNi)film.